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||Discovering new physics in low dimensional electron systems:The role of high mobility Molecular Beam Epitaxy
||Professor Loren Pfeiffer
Professor Loren Pfeiffer received his bachelor’s degree in physics from the University of Michigan in 1961, and his PhD in physics from The Johns Hopkins University in 1967. In 1968 he joined the technical staff of AT&T Bell Laboratories in Murray Hill, New Jersey. He was named Distinguished Member of Technical Staff in 1990, and continued in this position when Bell Laboratories became part of Lucent Technologies Inc. He is presently the senior research scholar in department of Electrical Engineering, Princeton University.
The promising possibilities for new discoveries in the field of quantum Hall physics during the past 30 years have led to a sustained world-wide effort to improve the materials and fabrication quality of the 2-dimensional (2D) electron systems that display these effects. The integer Quantum Hall Effect was discovered in 1980 in Silicon MOSFETs. Two years later the Fractional Quantum Hall Effect was discovered in GaAs-AlGaAs hetero-structures. Now, recent experiments in GaAs-AlGaAs suggest the possible existence of a third Quantum Hall variety, the Quantum Hall Effect of Quasiparticles obeying Non-abelian Statistics. If these new results are confirmed it could make possible an application of the Quantum Hall Effect, which could lead to an elegant topological lock against de-coherence of entangled 2D quantum states, and thus would point the way toward building a quantum computer with built-in error correction. We will review how these 2D systems are fabricated by GaAs Molecular Beam Epitaxy (MBE), and how the sequential discoveries of the various levels of the Quantum Hall effect have depended on the gradually improving quality of the MBE samples, and how semiconductor perfection still limits current experiments that are exploring the properties of the putative non-abelian quasiparticles.
联 系 人：吕 力 研究员 （82649151）
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